Kalna, K. and Asenov, A. and Elgaid, K. and Thayne, I. (2000) Effect of impact ionization in scaled pHEMTs. In, 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic

Performance of aggressively scaled pseudomorphic HEMTs: a monte carlo simulation study - Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroCon

Asenov, A. and Kalna, K. (2000) Effect of oxide interface roughness on the threshold voltage fluctuations in decanano MOSFETs with ultrathin gate oxides. In, International Conference on Simulation of Semiconductor Processes and Devices

In this paper we use the Density Gradient (DG) simulation approach to study, in 3-D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2-D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the Quantum Mechanica...

50-nm Self-Aligned and “Standard” T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node

Continued research into the development of III–V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date. In addition, more recent research has begun to focus on reducing the parasitic device elements such as access resistance and gate fringing capacitance, which beco...

Ballistic (n,0) Carbon Nanotube Field Effect Transistors' I-V Characteristics: A Comparison of n=3a+1 and n=3a+2

Due to emergence of serious obstacles by scaling of the transistors dimensions, it has been obviously proved that silicon technology should be replaced by a new one having a high ability to overcome the barriers of scaling to nanometer regime. Among various candidates, carbon nanotube (CNT) field effect transistors are introduced as the most promising devices for substituting the silicon-based ...

Influences of Device Architectures on Characteristics of Organic Light-Emitting Devices Incorporating Ambipolar Blue-Emitting Ter(9,9-diarylfluorenes)

In this article, we report the studies of various device architectures of organic lightemitting devices (OLEDs) incorporating highly efficient blue-emitting and ambipolar carriertransport ter(9,9-diarylfluorene)s, and their influences on device characteristics. The device structures investigated include single-layer devices and multilayer heterostructure devices employing the terfluorene as one...